fdn86246 150 v, 1.6 a, 261 m features max r ds(on) = 261 m at v gs = 10 v, i d = 1.6 a max r ds(on) = 359 m at v gs = 6 v, i d = 1.4 a high performance trench technology for extremely low r ds(on) high power and current handling capability in a widely used surface mount package fast switching speed 100% uil tested rohs compliant general description this n-channel mosfet is produced using fairchild semiconductors advanced power trench ? process that has been optimized for r ds(on) , switching performance and ruggedness. application pd switch mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking an d ordering information symbol parameter ratings units v ds drain to source voltage 150 v v gs gate to source voltage 20 v i d -continuous (note 1a) 1.6 a -pulsed 6 e as single pulse avalanche energy (note 3) 13 mj p d power dissipation (note 1a) 1.5 w power dissipation (note 1b) 0.6 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 75 c/w r ja thermal resistance, junction to ambient (note 1a) 80 device marking device package reel size tape width quantity 246 fdn86246 ssot-3 7 8 mm 3000 units 1 of 2 4008-318-123 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 150 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 106 mv/c i dss zero gate voltage drain current v ds = 120 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a23.44v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -9 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 1.6 a 195 261 m v gs = 6 v, i d = 1.4 a 242 359 v gs = 10 v, i d = 1.6 a, t j = 125 c 359 481 g fs forward transconductance v ds = 10 v, i d = 1.6 a 4 s (note 2) dynamic characteristics c iss input capacitance v ds = 75 v, v gs = 0 v, f = 1 mhz 168 225 pf c oss output capacitance 21 30 pf c rss reverse transfer capacitance 1.6 5 pf r g gate resistance 0.9 switching characteristics t d(on) turn-on delay time v dd = 75 v, i d = 1.6 a, v gs = 10 v, r gen = 6 4.5 10 ns t r rise time 1.1 10 ns t d(off) turn-off delay time 8 16 ns t f fall time 2.9 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 75 v, i d = 1.6 a 2.9 5 nc q g total gate charge v gs = 0 v to 5 v 1.6 3 nc q gs gate to source gate charge 0.9 nc q gd gate to drain miller charge 0.8 nc drain-source diode characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 1.6 a (note 2) 0.83 1.3 v t rr reverse recovery time i f = 1.6 a, di/dt = 100 a/ s 44 70 ns q rr reverse recovery charge 29 47 nc notes : 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c; n-ch: l = 3 mh, i as = 3 a, v dd = 150 v, v gs = 10 v. 80 c/w when mounted on a 1 in 2 pad of 2 oz copper a) 180 c/w when mounted on a minimum pad. b) 2 of 2 4008-318-123 http://www.twtysemi.com fdn86246 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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